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SUP/SUB75P05-08
New Product
Vishay Siliconix
P-Channel 55-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
-55
rDS(on) (W)
0.008
ID (A)
-75a
TO-220AB
S
TO-263
G DRAIN connected to TAB
GDS Top View SUP75P05-08
G
DS D
Top View SUB75P05-08 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol
VDS VGS TC = 25_C TC = 150_C ID IDM IAR L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 125_C (TO-263)c EAR PD TJ, Tstg
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Limit
-55 "20 -75a -47 -240 -75 280 250d
Unit
V
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation
A
mJ W
3.7 -55 to 175 _C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)c Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes: a. Package limited. b. Duty cycle v 1%. c. When mounted on 1" square PCB (FR-4 material). d. See SOA curve for voltage derating. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70891 S-99404--Rev. B, 29-Nov-99 www.vishay.com S FaxBack 408-970-5600 RthJA RthJC 62.5 0.6
Symbol
RthJA
Limit
40
Unit
_C/W
2-1
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SUP/SUB75P05-08
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = -250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -44 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = -44 V, VGS = 0 V, TJ = 125_C VDS = -44 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -30 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = -4.5 V, ID = -20 A VGS = -10 V, ID = -30 A, TJ = 125_C VGS = -10 V, ID = -30 A, TJ = 175_C Forward Transconductancea gfs VDS = -15 V, ID = -30 A 75 -120 0.008 0.013 0.014 0.016 S W -55 V -1 -2 -3 "100 -1 -50 -700 A mA A nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg VGS = 0 V, VDS = -25 V f = 1 MHz V 25 V, MH 8500 1220 915 140 30 30 13 VDD = -30 V, RL = 0.47 W , ID ] -75 A, VGEN = -10 V, RG = 2.5 W 140 115 175 20 225 ns 185 300 225 nC C pF F
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Qgs VDS = -30 V VGS = -10 V, ID = -75 A 30 V, 10 V 75 Qgd td(on) tr td(off) tf
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr IF = -75 A, di/dt = 100 A/ms 75 A di/d A/ IF = -75 A, VGS = 0 V -1.1 60 2.2 0.176 -75 A -240 -1.3 120 3.5 0.21 V ns A mC
Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
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Document Number: 70891 S-99404--Rev. B, 29-Nov-99
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SUP/SUB75P05-08
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250 VGS = 10 thru 7 V 6V 200 5V I D - Drain Current (A) 150 I D - Drain Current (A) 120 125_C 160 200 TC = -55_C 25_C
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Transfer Characteristics
100 4V 50 3V 0 0 2 4 6 8 10
80
40
0 0 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Transconductance
120 TC = -55_C g fs - Transconductance (S) 90 25_C 125_C r DS(on)- On-Resistance ( W ) 0.06
On-Resistance vs. Drain Current
0.05
60
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0.04 0.03 0.02 VGS = 4.5 V 0.01 VGS = 10 V 0 0 20 40 60 80 100 0 20 40 60 80 100 120
30
0
ID - Drain Current (A)
ID - Drain Current (A)
Capacitance
12000 20
Gate Charge
V GS - Gate-to-Source Voltage (V)
10000 Ciss C - Capacitance (pF) 8000
16
VDS = 30 V ID = 75 A
12
6000
8
4000 Coss Crss 0 0 11 22 33 44 55
2000
4
0 0 50 100 150 200 250 300
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Document Number: 70891 S-99404--Rev. B, 29-Nov-99
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SUP/SUB75P05-08
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.0 VGS = 10 V ID = 30 A r DS(on)- On-Resistance ( W ) (Normalized) 1.6 I S - Source Current (A) 100
Source-Drain Diode Forward Voltage
1.2
TJ = 150_C TJ = 25_C 10
0.8
0.4
0 -50
1 -25 0 25 50 75 100 125 150 175 0 1 VSD - Source-to-Drain Voltage (V) 10
TJ - Junction Temperature (_C)
Avalanche Current vs. Time
1000 70
Drain Source Breakdown vs. Junction Temperature
100 I Dav (a)
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65 ID = 250 mA IAV (A) @ TJ = 25_C V (BR)DSS (V) IAV (A) @ TJ = 150_C 60 55 50
10
1 45
0.1 0.00001 0.0001 0.001 0.01 0.1 1
40 -50
-25
0
25
50
75
100
125
150
175
tin (Sec)
TJ - Junction Temperature (_C)
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Document Number: 70891 S-99404--Rev. B, 29-Nov-99
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SUP/SUB75P05-08
New Product
THERMAL RATINGS
Maximum Avalanche and Drain Current vs. Case Temperature 90 75 I D - Drain Current (A)
100 500
Vishay Siliconix
Safe Operating Area
10 ms 100 ms
Limited by rDS(on)
60 45 30 15 0 0 25 50 75 100 125 150 175
TC - Case Temperature (_C)
I D - Drain Current (A)
1 ms 10 10 ms TC = 25_C Single Pulse 100 ms dc
1 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
2 1 Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
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Single Pulse
0.1
0.1
0.05 0.02
0.01 10-5
10-4
10-3
10-2
10-1
1
3
Square Wave Pulse Duration (sec)
Document Number: 70891 S-99404--Rev. B, 29-Nov-99
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